Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 135 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
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- G! G DS
TO-220 FQP
GD S
TO-220F FQPF
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S
Absolute Maximum Ratings
Symbol VDSS ID www. DataSheet4U. com IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Cu.
