IRF520A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF520A
Manufacturer	Fairchild ↗ Semiconductor
File Size	243.94 KB
Description	Advanced Power MOSFET
Datasheet	IRF520A_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max. ) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ. ) Ο IRF520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuou.

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Published: Apr 16, 2005 |