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IRF620B - 200V N-Channel MOSFET

IRF620B Description

IRF620B/IRFS620B November 2001 IRF620B/IRFS620B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRF620B Features

* 5.0A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

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Datasheet Details

Part number
IRF620B
Manufacturer
Fairchild Semiconductor
File Size
875.32 KB
Datasheet
IRF620B_FairchildSemiconductor.pdf
Description
200V N-Channel MOSFET

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200V N-Channel MOSFET Fairchild Semiconductor
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