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IRFU410B, IRFR410B 500V N-Channel MOSFET

IRFU410B Description

www.DataSheet4U.com IRFR410B / IRFU410B November 2001 IRFR410B / IRFU410B 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFU410B Features

* 0.9A, 500V, RDS(on) = 10Ω @VGS = 10 V Low gate charge ( typical 5.1 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D-PAK IRFR Series I-PAK G D S IRFU Ser

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRFU410B, IRFR410B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRFU410B, IRFR410B
Manufacturer
Fairchild Semiconductor
File Size
830.57 KB
Datasheet
IRFR410B_FairchildSemiconductor.pdf
Description
500V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: IRFU410B, IRFR410B.
Please refer to the document for exact specifications by model.

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500V N-Channel MOSFET Fairchild Semiconductor
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