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SSP2N60A - Advanced Power MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: SSP2N60A
Manufacturer: Fairchild Semiconductor
File Size: 444.91 KB
Datasheet: SSP2N60A_FairchildSemiconductor.pdf
Description: Advanced Power MOSFET

SSP2N60A Product details

Features

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ. ) 1 2 3 SSP2N60A BVDSS = 600 V RDS(on) = 5.0 Ω ID = 2 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drai.

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Published: Sep 16, 2006 |