Datasheet4U Logo Datasheet4U.com

LP6872P100 Datasheet - Filtronic Compound Semiconductors

Packaged 0.5W Power PHEMT

LP6872P100 General Description

AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes.

LP6872P100 Datasheet (23.16 KB)

Preview of LP6872P100 PDF

Datasheet Details

Part number:

LP6872P100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

23.16 KB

Description:

Packaged 0.5w power phemt.

📁 Related Datasheet

LP6872 0.5W POWER PHEMT (Filtronic Compound Semiconductors)

LP6836 MEDIUM POWER PHEMT (Filtronic Compound Semiconductors)

LP6836P100 Packaged 0.25W Power PHEMT (Filtronic Compound Semiconductors)

LP6836P70 PACKAGED MEDIUM POWER PHEMT (Filtronic Compound Semiconductors)

LP6836SOT343 PACKAGED MEDIUM POWER PHEMT (Filtronic Compound Semiconductors)

LP6-EWN1-03-N3 SMD LED (Cree)

LP6-EWN1-03-N3-MT 6.0x5.0mm Tri-Chip Surface Mount LEDs (Marktech Optoelectronics)

LP6002 10Base-T Isolation Transformers (Link-PP)

LP60100100F Lithium Iron Phosphate Battery (EEMB)

LP6062NL Gigabit Transformer (Link-PP)

TAGS

LP6872P100 Packaged 0.5W Power PHEMT Filtronic Compound Semiconductors

Image Gallery

LP6872P100 Datasheet Preview Page 2

LP6872P100 Distributor