LP6872P100 Description
AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable...
LP6872P100 Key Features
- +27 dBm Typical Power at 15 GHz 11 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Effici