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LP6872P100 - Packaged 0.5W Power PHEMT

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Part number LP6872P100
Manufacturer Filtronic Compound Semiconductors
File Size 23.16 KB
Description Packaged 0.5W Power PHEMT
Datasheet download datasheet LP6872P100 Datasheet
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Description

AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimized for reliable high-power applications.The LP6872 also

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