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LP6872P100 - Packaged 0.5W Power PHEMT

LP6872P100 Description

Filtronic Solid State .
AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility.

LP6872P100 Features

* LP6872P100 Packaged 0.5W Power PHEMT GATE

LP6872P100 Applications

* The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-s

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Packaged 0.5W Power PHEMT Filtronic Compound Semiconductors
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