LP6872P100 Packaged 0.5W Power PHEMT

Filtronic Compound Semiconductors

Description

Filtronic Solid State .
AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility.

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Datasheet Specifications

Part number: LP6872P100
Manufacturer: Filtronic Compound Semiconductors
File Size: 23.16 KB
Datasheet: LP6872P100_FiltronicCompoundSemiconductors.pdf
Description: Packaged 0.5W Power PHEMT

Features

* LP6872P100 Packaged 0.5W Power PHEMT GATE

Applications

* The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-s

LP6872P100 Distributors

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LP6872P100 Packaged 0.5W Power PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors LP6872P100-like datasheet