Part number: LP6872P100
Manufacturer: Filtronic Compound Semiconductors
File Size: 23.16KB
Download: 📄 Datasheet
Description: Packaged 0.5W Power PHEMT
LP6872P100
Packaged 0.5W Power PHEMT GATE
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+27 dBm Typical Power at 15 GHz 11 dB Typical Power Gain at 15 GHz Low Intermodulation Distorti.
The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Elec.
AND APPLICATIONS
The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate.
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