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LP6872P100 Datasheet - Filtronic Compound Semiconductors

LP6872P100 Packaged 0.5W Power PHEMT

AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes.

LP6872P100 Datasheet (23.16 KB)

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Datasheet Details

Part number:

LP6872P100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

23.16 KB

Description:

Packaged 0.5w power phemt.

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TAGS

LP6872P100 Packaged 0.5W Power PHEMT Filtronic Compound Semiconductors

LP6872P100 Distributor