Datasheet Summary
Filtronic
Solid State
Features
Packaged 0.25W Power PHEMT
- -
- -
- GATE
+24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range
SOURCE
DRAIN
DESCRIPTION AND APPLICATIONS
The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power...