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LP6872 - 0.5W POWER PHEMT

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Part number LP6872
Manufacturer Filtronic Compound Semiconductors
File Size 38.59 KB
Description 0.5W POWER PHEMT
Datasheet download datasheet LP6872 Datasheet
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AND APPLICATIONS DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 720 µ m Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimiz

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