Datasheet Summary
0.5W POWER PHEMT
- Features
- 27 dBm Output Power at 1-dB pression at 18 GHz
- 9.5 dB Power Gain at 18 GHz
- 55% Power-Added Efficiency
DRAIN BOND PAD (2X) SOURCE BOND PAD (2x)
GATE BOND PAD (2X)
- DESCRIPTION AND APPLICATIONS
DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm)
The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 720 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and...