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LP6872 - 0.5W POWER PHEMT

Description

AND APPLICATIONS DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam dire

Features

  • S.
  • 27 dBm Output Power at 1-dB Compression at 18 GHz.
  • 9.5 dB Power Gain at 18 GHz.
  • 55% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) LP6872 GATE BOND PAD (2X).

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Datasheet preview – LP6872

Datasheet Details

Part number LP6872
Manufacturer Filtronic Compound Semiconductors
File Size 38.59 KB
Description 0.5W POWER PHEMT
Datasheet download datasheet LP6872 Datasheet
Additional preview pages of the LP6872 datasheet.

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Full PDF Text Transcription

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0.5W POWER PHEMT • FEATURES ♦ 27 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) LP6872 GATE BOND PAD (2X) • DESCRIPTION AND APPLICATIONS DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 720 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications.
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