LP6836P70 Datasheet | Filtronic Compound Semiconductors

PACKAGED MEDIUM POWER PHEMT - Features - 23 dBm Output Power at 1-dB pression at 15 GHz - 11.5 dB Power Gain at 15 GHz - 50% Power-Added Efficiency - DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µ m x 360 µ m Schottky barrier gate, defined by electron-beam photolithography. Typical applications include pre-drivers in mercial wireless infrastructure and radio link highperformance power amplifiers. - ELECTRICAL SPECIFICATIONS @ TAmbient = 25 ° C- Parameter Saturated Drain-Source...