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LP6836P70 - PACKAGED MEDIUM POWER PHEMT

Description

AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range.

Features

  • S.
  • 23 dBm Output Power at 1-dB Compression at 15 GHz.
  • 11.5 dB Power Gain at 15 GHz.
  • 50% Power-Added Efficiency LP6836P70.

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Datasheet preview – LP6836P70

Datasheet Details

Part number LP6836P70
Manufacturer Filtronic Compound Semiconductors
File Size 59.89 KB
Description PACKAGED MEDIUM POWER PHEMT
Datasheet download datasheet LP6836P70 Datasheet
Additional preview pages of the LP6836P70 datasheet.

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Full PDF Text Transcription

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PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.5 dB Power Gain at 15 GHz ♦ 50% Power-Added Efficiency LP6836P70 • DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µ m x 360 µ m Schottky barrier gate, defined by electron-beam photolithography. Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance power amplifiers.
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