Datasheet Details
| Part number | LP6836P70 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 59.89 KB |
| Description | PACKAGED MEDIUM POWER PHEMT |
| Download | LP6836P70 Download (PDF) |
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| Part number | LP6836P70 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 59.89 KB |
| Description | PACKAGED MEDIUM POWER PHEMT |
| Download | LP6836P70 Download (PDF) |
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AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range.
It utilizes a 0.25 µ m x 360 µ m Schottky barrier gate, defined by electron-beam photolithography.
Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance power amplifiers.
PACKAGED MEDIUM POWER PHEMT •.
| Part Number | Description |
|---|---|
| LP6836P100 | Packaged 0.25W Power PHEMT |
| LP6836 | MEDIUM POWER PHEMT |
| LP6836SOT343 | PACKAGED MEDIUM POWER PHEMT |
| LP6872 | 0.5W POWER PHEMT |
| LP6872P100 | Packaged 0.5W Power PHEMT |