Datasheet Details
| Part number | LP6872P100 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 23.16 KB |
| Description | Packaged 0.5W Power PHEMT |
| Download | LP6872P100 Download (PDF) |
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| Part number | LP6872P100 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 23.16 KB |
| Description | Packaged 0.5W Power PHEMT |
| Download | LP6872P100 Download (PDF) |
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AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power applications.
Filtronic Solid State.
| Part Number | Description |
|---|---|
| LP6872 | 0.5W POWER PHEMT |
| LP6836 | MEDIUM POWER PHEMT |
| LP6836P100 | Packaged 0.25W Power PHEMT |
| LP6836P70 | PACKAGED MEDIUM POWER PHEMT |
| LP6836SOT343 | PACKAGED MEDIUM POWER PHEMT |