LP6872P100 Datasheet PDF (Packaged 0.5W Power PHEMT) | Download Filtronic Compound Semiconductors LP6872P100

LP6872P100 - Packaged 0.5W Power PHEMT

Description

The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate.

Features

LP6872P100 Packaged 0.5W Power PHEMT GATE.
+27 dBm Typical Power at 15 GHz 11 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN.

Datasheet Details

Part number	LP6872P100
Manufacturer	Filtronic Compound Semiconductors
File Size	23.16 KB
Description	Packaged 0.5W Power PHEMT
Datasheet	LP6872P100 Datasheet
Additional preview pages of the LP6872P100 datasheet.

📁 Similar Datasheet

LP6-EWN1-03-N3 - SMD LED (Cree)

LP6-EWN1-03-N3-MT - 6.0x5.0mm Tri-Chip Surface Mount LEDs (Marktech Optoelectronics)

LP6002 - 10Base-T Isolation Transformers (Link-PP)

LP60100100F - Lithium Iron Phosphate Battery (EEMB)

LP6062NL - Gigabit Transformer (Link-PP)

LP61L1008 - 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM (AMIC Technology)

LP61L1008A - 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM (AMIC Technology)

LP61L1024 - 128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM (AMIC Technology)

LP61L256B - 32K X 8 Bit High SPEED LOW VCC CMOS SRAM (AMIC Technology)

LP61L256C - 32K X 8 BIT HIGH SPEED CMOS SRAM (AMIC Technology)

Full PDF Text Transcription

Click to expand full text

Filtronic Solid State FEATURES LP6872P100 Packaged 0.5W Power PHEMT GATE • • • • • +27 dBm Typical Power at 15 GHz 11 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN DESCRIPTION AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP6872 also features Si3N4 passivation and is available in die form.

Published: Mar 22, 2005 |