Datasheet Summary
Filtronic
Solid State
Features
Packaged 0.5W Power PHEMT GATE
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- +27 dBm Typical Power at 15 GHz 11 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Efficiency Color-coded by IDSS range
SOURCE
DRAIN
DESCRIPTION AND APPLICATIONS
The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power...