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LP6836 - MEDIUM POWER PHEMT

Description

AND APPLICATIONS DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm) The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam dir

Features

  • S.
  • 25 dBm Output Power at 1-dB Compression at 18 GHz.
  • 9.5 dB Power Gain at 18 GHz.
  • 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) LP6836 GATE BOND PAD.

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Datasheet preview – LP6836

Datasheet Details

Part number LP6836
Manufacturer Filtronic Compound Semiconductors
File Size 35.54 KB
Description MEDIUM POWER PHEMT
Datasheet download datasheet LP6836 Datasheet
Additional preview pages of the LP6836 datasheet.

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MEDIUM POWER PHEMT • FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) LP6836 GATE BOND PAD • DESCRIPTION AND APPLICATIONS DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm) The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 360 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.
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