Datasheet Summary
MEDIUM POWER PHEMT
- Features
- 25 dBm Output Power at 1-dB pression at 18 GHz
- 9.5 dB Power Gain at 18 GHz
- 55% Power-Added Efficiency
DRAIN BOND PAD SOURCE BOND PAD (2x)
GATE BOND PAD
- DESCRIPTION AND APPLICATIONS
DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm)
The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 360 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and...