LP1500P100 PACKAGED 1W POWER PHEMT

Filtronic Compound Semiconductors

LP1500P100 Description

PACKAGED 1W POWER PHEMT * .
AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility.

LP1500P100 Features

* 31 dBm Output Power at 1-dB Compression at 15 GHz
* 9 dB Power Gain at 15 GHz
* 42 dBm Output IP3 at 15GHz
* 60% Power-Added Efficiency LP1500P100

LP1500P100 Applications

* The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimiz

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LP1500P100 Datasheet Preview — Preview of LP1500P100 PDF

Datasheet Details

Part number: LP1500P100
Manufacturer: Filtronic Compound Semiconductors
File Size: 48.47 KB
Datasheet: LP1500P100_FiltronicCompoundSemiconductors.pdf
Description: PACKAGED 1W POWER PHEMT

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