The FS312MH battery protection IC with built-in N-MOSFET is designed to protect lithium-ion /polymer battery from damage or degrading the lifetime due to overcharge, overdischarge, and/ or overcurrent for one-cell lithium-ion/polymer battery powered systems, such as cellular phones.
The ultra-small
REV.
1.1 FS312MH-DS-11_EN MAY 2013 For RReDfeoecirpeNinoetcnte:CoOpnlyy Datasheet FS312MH One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET Fortune Semiconductor Corporation 23F,No.
29-5, Sec.
2, Zhongzheng E.
Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874 www.ic-fortune.com FS312MH For RReDfeoecirpeNinoetcnte:CoOpnlyy This manual contains new product information.
Fortune Semiconductor Corporation reserves the rights to modify
FS312MH Features
* z Built-in N-MOSFET of low turn-on resistance. z Reduction in Board Size due to Miniature Package SOT-23-6 or TSSOP-8. z Protection IC：
* Ultra-Low Quiescent Current at 3μA (Vcc=3.9V).
* Overcharge Protection Voltage 4.25V ± 30mV
* Overdischarge Protection Voltage 2.9V ± 100m
Datasheet Details
FS312MH
Fortune
1.05 MB
One cell lithium-ion/polymer battery protection.
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