MRF6P18190HR6 - RF Power Field Effect Transistor
Short RF Beads 0.6 - 4.5 pF Variable Capacitor 5.6 pF Chip Capacitors 7.5 pF Chip Capacitors 1K pF Chip Capacitors 1 µF, 50 V Tantalum Capacitors 0.1 µF Chip Capacitors 100 µF, 50 V Electrolytic Capacitors, Radial 6.8 pF Chip Capacitors 0.56 µF Chip Capacitors (1825) 22 µF, 35 V Tantalum Capacitors
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev.
0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout
MRF6P18190HR6 Features
* M3 (dBc), ACPR (dBc) 30 VDD = 28 Vdc, IDQ = 2000 mA f1 = 1837.5 MHz, f2 = 1847.5 MHz 2 x W
* CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps TC = 25_C ηD 85_C 20
* 40 10
* 30_C 25_C
* 30_C 25_C 85_C 10
* 45 0
* 10 1
