MRF6P18190HR6 RF Power Field Effect Transistor

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev.0, 4/2005 RF Power Field Effect Transistor N - Channe.
Short RF Beads 0.

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Datasheet Specifications

Part number: MRF6P18190HR6
Manufacturer: Freescale Semiconductor
File Size: 487.09 KB
Datasheet: MRF6P18190HR6_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* M3 (dBc), ACPR (dBc) 30 VDD = 28 Vdc, IDQ = 2000 mA f1 = 1837.5 MHz, f2 = 1847.5 MHz 2 x W
* CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps TC = 25_C ηD 85_C 20
* 40 10
* 30_C 25_C
* 30_C 25_C 85_C 10
* 45 0
* 10 1

Applications

* with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
* Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 44 Watts Avg. , Full Frequency B

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MRF6P18190HR6 Power Field Effect Transistor Freescale Semiconductor

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