MRF6P18190HR6 Datasheet - Freescale Semiconductor

MRF6P18190HR6 RF Power Field Effect Transistor

Short RF Beads 0.6 - 4.5 pF Variable Capacitor 5.6 pF Chip Capacitors 7.5 pF Chip Capacitors 1K pF Chip Capacitors 1 µF, 50 V Tantalum Capacitors 0.1 µF Chip Capacitors 100 µF, 50 V Electrolytic Capacitors, Radial 6.8 pF Chip Capacitors 0.56 µF Chip Capacitors (1825) 22 µF, 35 V Tantalum Capacitors .

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout.

MRF6P18190HR6 Features

* M3 (dBc), ACPR (dBc) 30 VDD = 28 Vdc, IDQ = 2000 mA f1 = 1837.5 MHz, f2 = 1847.5 MHz 2 x W

* CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps TC = 25_C ηD 85_C 20

* 40 10

* 30_C 25_C

* 30_C 25_C 85_C 10

* 45 0

* 10 1

MRF6P18190HR6_FreescaleSemiconductor.pdf

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Datasheet Details

Part number:

MRF6P18190HR6

Manufacturer:

Freescale Semiconductor

File Size:

487.09 KB

Description:

Rf power field effect transistor.

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