MRF6P24190HR6 RF Power Field Effect Transistor

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev.1, 3/2007 RF Power Field Effect Transistor N - Channe.
Part Number 2508051107Y0 ATC100B5R1CT500XT ATC100B5R6CT500XT C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AT GRM55DR61H106KA88B NACZF331M6.

📥 Download Datasheet

MRF6P24190HR6 Datasheet Preview — Preview of MRF6P24190HR6 PDF

Datasheet Specifications

Part number: MRF6P24190HR6
Manufacturer: Freescale Semiconductor
File Size: 389.47 KB
Datasheet: MRF6P24190HR6_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* RoHS Compliant
* In Tape and Reel. R6 Suffix = 150 Units per 5

Applications

* at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.
* Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1900 mA, Pout = 190 Watts Power Gain
* 13.2 dB Drain Efficiency
* 46.2%
* Capable of Handling 10:1 VSWR, @ 28 Vdc, 2

MRF6P24190HR6 Distributors

📁 Related Datasheet

MRF604 MRF607 MRF616 MRF626 MRF627 MRF628

📌 All Tags

MRF6P24190HR6 Power Field Effect Transistor Freescale Semiconductor

Freescale Semiconductor MRF6P24190HR6-like datasheet