MRF6P24190HR6 - RF Power Field Effect Transistor
Part Number 2508051107Y0 ATC100B5R1CT500XT ATC100B5R6CT500XT C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AT GRM55DR61H106KA88B NACZF331M63V CRCW12062400FKTA Manufacturer Fair - Rite ATC ATC Kemet Kemet Panasonic TE series Kemet Murata Nippon Vishay MRF6P24190HR6 RF Device Data Freescal
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev.
1, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz.
Device is suitable for use in industrial, medical and scientific applications.
Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1900 mA, Pout = 190 Watts Power Gain 13.2 dB Drain Efficiency 46.2%
MRF6P24190HR6 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* RoHS Compliant
* In Tape and Reel. R6 Suffix = 150 Units per 5
