MRF6P3300HR3 - N-Channel MOSFET
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5.
Refer to Device Migration PCN12895 for more details.
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with fre‐ quencies from 470 to 860 MHz.
The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applica‐ tions in 32 volt an
MRF6P3300HR3 Features
* Characterized with Series Equivalent Large-Signal Impedance Parameters
* Internally Matched for Ease of Use
* Designed for Push-Pull Operation Only
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* RoHS Compliant
