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MRF6P3300HR3 N-Channel MOSFET

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Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5.Refer to Device Migrat.

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Features

* Characterized with Series Equivalent Large-Signal Impedance Parameters
* Internally Matched for Ease of Use
* Designed for Push-Pull Operation Only
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* RoHS Compliant

Applications

* with fre‐ quencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applica‐ tions in 32 volt analog or digital television transmitter equipment.
* Typical Narrowband Two-T one Performance @ 860 MHz: VDD = 3

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