MRF6P23190HR6 - RF Power Field Effect Transistor

Freescale Semiconductor

MRF6P23190HR6 Datasheet Preview — Preview of MRF6P23190HR6 PDF

Datasheet Details

Part number	MRF6P23190HR6
Manufacturer	Freescale Semiconductor
File Size	455.76 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF6P23190HR6_FreescaleSemiconductor.pdf

MRF6P23190HR6 Product details

Description

Part Number 2508051107Y0 ATC100B5R1CT500XT ATC100B5R6CT500XT C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AT GRM55DR61H106KA88B NACZF331M63V CRCW12062400FKTA Manufacturer Fair - Rite ATC ATC Kemet Kemet Panasonic TE series Kemet Murata Nippon Vishay MRF6P23190HR6 RF Device Data Freescale Semiconductor 3 R1 C12 C11 C10 C9 C20 C21 B1 B2 C5 C7 C17 C18 C19 C27 C3 C1 CUT OUT AREA C2 C4 MRF6P23190H Rev.3 C6 B3 B4 C8 C22 R2 C16 C15 C14 C13 C23 C24 C25 C26 C

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Apr 15, 2007 |