* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App
MRF6P23190HR6 Datasheet (455.76 KB)
MRF6P23190HR6
Freescale Semiconductor
455.76 KB
Rf power field effect transistor.
Freescale Semiconductor Technical Data
Document Number: MRF6P23190H Rev. 2, 3/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode .
📁 Related Datasheet
MRF6P21190HR6 RF Power Field Effect Transistor (Freescale Semiconductor)
MRF6P24190HR6 RF Power Field Effect Transistor (Freescale Semiconductor)
MRF6P27160HR6 RF Power Field Effect Transistor (Freescale Semiconductor)
MRF6P18190HR6 RF Power Field Effect Transistor (Freescale Semiconductor)
MRF6P3300HR3 N-Channel MOSFET (Freescale Semiconductor)
MRF6P3300HR5 N-Channel MOSFET (Freescale Semiconductor)
MRF6P9220HR3 RF Power Field Effect Transistor (Freescale Semiconductor)
MRF604 HIGH FREQUENCY TRANSISTOR (Motorola)
MRF604 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
MRF607 HIGH FREQUENCY TRANSISTOR (Motorola)
