MRF6P23190HR6 RF Power Field Effect Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev.2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode .
Part Number 2508051107Y0 ATC100B5R1CT500XT ATC100B5R6CT500XT C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AT GRM55DR61H106KA88B NACZF331M6.

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Datasheet Specifications

Part number: MRF6P23190HR6
Manufacturer: Freescale Semiconductor
File Size: 455.76 KB
Datasheet: MRF6P23190HR6_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App

Applications

* with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications.
* Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 40 Watts Avg. , Full Frequency Band, Channel Ba

MRF6P23190HR6 Distributors

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MRF6P23190HR6 Power Field Effect Transistor Freescale Semiconductor

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