Datasheet Specifications
- Part number
- MRF6P27160HR6
- Manufacturer
- Freescale Semiconductor
- File Size
- 446.20 KB
- Datasheet
- MRF6P27160HR6_FreescaleSemiconductor.pdf
- Description
- RF Power Field Effect Transistor
Description
Freescale Semiconductor Technical Data MRF6P27160H Rev.0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET De.
Features
* 16 15 Gps, POWER GAIN (dB) 14 13 12 20 V 11 VDD = 16 V 0 400 10 0 60 120 180 240 300 Pout, OUTPUT POWER (WATTS) CW 28 V 24 V IDQ = 1800 mA f = 2645 MHz 10 30 32 V 5 VDD = 28 Vdc IDQ = 1800 mA f = 2645 MHz 1 10 100 20 0 ηDApplications
* with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.MRF6P27160HR6 Distributors
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