* 16 15 Gps, POWER GAIN (dB) 14 13 12 20 V 11 VDD = 16 V 0 400 10 0 60 120 180 240 300 Pout, OUTPUT POWER (WATTS) CW 28 V 24 V IDQ = 1800 mA f = 2645 MHz 10 30 32 V 5 VDD = 28 Vdc IDQ = 1800 mA f = 2645 MHz 1 10 100 20 0 ηD
* 5 0.1 10 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain
MRF6P27160HR6 Datasheet (446.20 KB)
MRF6P27160HR6
Freescale Semiconductor
446.20 KB
Rf power field effect transistor.
Freescale Semiconductor Technical Data
MRF6P27160H Rev. 0, 1/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
De.
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