MRF6P21190HR6 - RF Power Field Effect Transistor

Freescale Semiconductor

MRF6P21190HR6 Datasheet Preview — Preview of MRF6P21190HR6 PDF

Datasheet Details

Part number	MRF6P21190HR6
Manufacturer	Freescale Semiconductor
File Size	424.39 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF6P21190HR6_FreescaleSemiconductor.pdf

MRF6P21190HR6 Product details

Description

Part Number 2743019447 100B300JP500X 100B6R8CP500X 100B102JP50X T491C105K050AS CDR33BX104AKWS MCR50V107M8X11 100B430JP500X T491X226K035AS C1825C564J5RAC MCR63V477M13X26 CRCW12061001F100 CRCW120612R0F100 Manufacturer Fair - Rite ATC ATC ATC Kemet Kemet Multicomp ATC Kemet Kemet Multicomp Vishay Vishay MRF6P21190HR6 RF Device Data Freescale Semiconductor 3 + C6 R1 C5 C4 C3 MRF6P21190 Rev 2 C14 C15 C16 C17 C18 - C21 C2 R2 B1 B2 C1 C19 C20 C13 + CUT OUT AREA C7 R4 B3 B4 C22 C28 C29 +

Features

10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF).
30 IM3.
35.
40 Gps.
45.
50.
55.
60 100 IM3 (dBc), ACPR (dBc) ACPR 15 Gps, POWER GAIN (dB) 12 9 6 3 0 3 ηD 18 Gps Figure 8. Pulse CW Output Power versus Input Power 60 ηD, DRAIN.

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Published: Oct 8, 2007 |