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MRF6P21190HR6 RF Power Field Effect Transistor

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Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev.2, 8/2005 RF Power Field Effect Transistor N - Chan.
Part Number 2743019447 100B300JP500X 100B6R8CP500X 100B102JP50X T491C105K050AS CDR33BX104AKWS MCR50V107M8X11 100B430JP500X T491X226K035AS C1825C564J5R.

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Datasheet Specifications

Part number
MRF6P21190HR6
Manufacturer
Freescale Semiconductor
File Size
424.39 KB
Datasheet
MRF6P21190HR6_FreescaleSemiconductor.pdf
Description
RF Power Field Effect Transistor

Features

* 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)
* 30 IM3
* 35
* 40 Gps
* 45
* 50
* 55
* 60 100 IM3 (dBc), ACPR (dBc) ACPR 15 Gps, POWER GAIN (dB) 12 9 6 3 0 3 ηD 18 Gps Figure 8. Pulse CW Output Power versu

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 950 m

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