MRF6P21190HR6 Datasheet - Freescale Semiconductor

MRF6P21190HR6 RF Power Field Effect Transistor

Part Number 2743019447 100B300JP500X 100B6R8CP500X 100B102JP50X T491C105K050AS CDR33BX104AKWS MCR50V107M8X11 100B430JP500X T491X226K035AS C1825C564J5RAC MCR63V477M13X26 CRCW12061001F100 CRCW120612R0F100 Manufacturer Fair - Rite ATC ATC ATC Kemet Kemet Multicomp ATC Kemet Kemet Multicomp Vishay Visha.

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 2, 8/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. Typical 2 - Carrier W - CDMA Performan.

MRF6P21190HR6 Features

* 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)

* 30 IM3

* 35

* 40 Gps

* 45

* 50

* 55

* 60 100 IM3 (dBc), ACPR (dBc) ACPR 15 Gps, POWER GAIN (dB) 12 9 6 3 0 3 ηD 18 Gps Figure 8. Pulse CW Output Power versu

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Datasheet Details

Part number:

MRF6P21190HR6

Manufacturer:

Freescale Semiconductor

File Size:

424.39 KB

Description:

Rf power field effect transistor.

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