Datasheet Specifications
- Part number
- MRF9200LR3
- Manufacturer
- Freescale Semiconductor
- File Size
- 350.37 KB
- Datasheet
- MRF9200LR3_FreescaleSemiconductor.pdf
- Description
- N-Channel Enhancement-Mode Lateral MOSFETs
Description
www.DataSheet4U.com Freescale Semiconductor Technical Data MRF9200L Rev.1, 12/2004 RF Power Field Effect Transistors N *Channel Enhancemen.
Features
* er 3rd Order 5th Order 7th Order VDD = 26 Vdc, Pout = 200 W (PEP), IDQ = 1800 mA Two-Tone Measurements, Center Frequency = 880 MHz 1 TWO-TONE SPACING (MHz) 10 5th Order 7th Order 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 7. Intermodulation Distortion Products versus Output Power Figure 8.Applications
* with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for largeMRF9200LR3 Distributors
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