MRF9200LR3 - N-Channel Enhancement-Mode Lateral MOSFETs
RF Bead, Surface Mount (0603) RF Bead, Surface Mount (0805) 2.2 pF Chip Capacitor (0603) 47 pF Chip Capacitors (0805) 2.0 pF Chip Capacitor (0603) 0.4 *2.5 pF Variable Capacitors 8.2 pF Chip Capacitor (0603) 0.8 *8.0 pF Variable Capacitors 12 pF Chip Capacitors (0603) 10 pF Chip Capaci
www.DataSheet4U.com Freescale Semiconductor Technical Data MRF9200L Rev.
1, 12/2004 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment.
Typical Single Carrier N
MRF9200LR3 Features
* er 3rd Order 5th Order 7th Order VDD = 26 Vdc, Pout = 200 W (PEP), IDQ = 1800 mA Two-Tone Measurements, Center Frequency = 880 MHz 1 TWO-TONE SPACING (MHz) 10 5th Order 7th Order 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 7. Intermodulation Distortion Products versus Output Power Figure 8.
