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MRF9200LSR3, MRF9200LR3 N-Channel Enhancement-Mode Lateral MOSFETs

MRF9200LSR3 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data MRF9200L Rev.1, 12/2004 RF Power Field Effect Transistors N *Channel Enhancemen.
RF Bead, Surface Mount (0603) RF Bead, Surface Mount (0805) 2.

MRF9200LSR3 Features

* er 3rd Order 5th Order 7th Order VDD = 26 Vdc, Pout = 200 W (PEP), IDQ = 1800 mA Two-Tone Measurements, Center Frequency = 880 MHz 1 TWO-TONE SPACING (MHz) 10 5th Order 7th Order 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 7. Intermodulation Distortion Products versus Output Power Figure 8.

MRF9200LSR3 Applications

* with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large
* signal, common
* source amplifier applications in 26 volt base station equipment.
* Typical Single
* Carrier N
* CDMA Performance @ 880 MHz: VDD = 26 Vol

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF9200LSR3, MRF9200LR3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF9200LSR3, MRF9200LR3
Manufacturer
Freescale Semiconductor
File Size
350.37 KB
Datasheet
MRF9200LR3_FreescaleSemiconductor.pdf
Description
N-Channel Enhancement-Mode Lateral MOSFETs
Note
This datasheet PDF includes multiple part numbers: MRF9200LSR3, MRF9200LR3.
Please refer to the document for exact specifications by model.

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N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor
Freescale Semiconductor MRF9200LSR3-like datasheet