Description
www.DataSheet4U.com Freescale Semiconductor Technical Data MRF9200L Rev.1, 12/2004 RF Power Field Effect Transistors N *Channel Enhancemen.
RF Bead, Surface Mount (0603) RF Bead, Surface Mount (0805) 2.
Features
* er
3rd Order
5th Order 7th Order VDD = 26 Vdc, Pout = 200 W (PEP), IDQ = 1800 mA Two-Tone Measurements, Center Frequency = 880 MHz 1 TWO-TONE SPACING (MHz) 10
5th Order 7th Order 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
Figure 7. Intermodulation Distortion Products versus Output Power
Figure 8.
Applications
* with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large
* signal, common
* source amplifier applications in 26 volt base station equipment.
* Typical Single
* Carrier N
* CDMA Performance @ 880 MHz: VDD = 26 Vol
