* er 3rd Order 5th Order 7th Order VDD = 26 Vdc, Pout = 200 W (PEP), IDQ = 1800 mA Two-Tone Measurements, Center Frequency = 880 MHz 1 TWO-TONE SPACING (MHz) 10 5th Order 7th Order 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 7. Intermodulation Distortion Products versus Output Power Figure 8.
MRF9200LSR3 Datasheet (350.37 KB)
MRF9200LSR3
Freescale Semiconductor
350.37 KB
N-channel enhancement-mode lateral mosfets.
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Freescale Semiconductor Technical Data
MRF9200L Rev. 1, 12/2004
RF Power Field Effect Transistors
N
*Channel Enhancemen.
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