MRF9210R3 - RF Power Field Effect Transistor
11 Ω RF Beads, Surface Mount (0805) 0.8 - 1 GHz Xinger Balun 27 pF Chip Capacitor, B Case 12 pF Chip Capacitor (0603) 3.3 pF Chip Capacitors (0603) 9.1 pF Chip Capacitor, R Case 4.3 pF Chip Capacitor, B Case 0.4 - 2.5 pF Variable Capacitor 12 pF Chip Capacitor, B Case 470 µF, 63 V Electrolytic Capac
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
www.DataSheet4U.com Order this document by MRF9210/D The RF MOSFET Line RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.
The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment.
Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ
MRF9210R3 Features
* 2.5
* ALT @ 30 kHz BW +ALT @ 30 kHz BW
* 2.0
* 1.5
* 1.0
* 0.5 0 0.5 1.0 1.5 2.0 2.5 f, FREQUENCY (MHz) Figure 9. Single - Carrier Maximum N - CDMA Linear Output Power versus Drain Voltage Figure 10. Typical N - CDMA Spectrum MOTOROLA RF DEVI
