Datasheet4U Logo Datasheet4U.com

MW7IC930GNR1 - RF LDMOS Wideband Integrated Power Amplifiers

Description

47 pF Chip Capacitors 10 nF, 50 V Chip Cap

Features

  • www. DataSheet4U. com.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (2) Integrated ESD Protection 225°C Capable Plastic Package GND NC RoHS Compliant NC In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. V GND V.

📥 Download Datasheet

Datasheet preview – MW7IC930GNR1

Datasheet Details

Part number MW7IC930GNR1
Manufacturer Freescale Semiconductor
File Size 717.36 KB
Description RF LDMOS Wideband Integrated Power Amplifiers
Datasheet download datasheet MW7IC930GNR1 Datasheet
Additional preview pages of the MW7IC930GNR1 datasheet.
Other Datasheets by Freescale Semiconductor

Full PDF Text Transcription

Click to expand full text
Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 960 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation. Driver Application — 900 MHz • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency (1) 920 MHz 940 MHz 960 MHz Gps (dB) 36.6 36.8 36.6 PAE (%) 16.1 16.7 17.3 ACPR (dBc) - 48.0 - 48.7 - 48.
Published: |