MRF6P27160HR6 - RF Power Field Effect Transistor

Freescale Semiconductor

MRF6P27160HR6 Datasheet Preview — Preview of MRF6P27160HR6 PDF

Datasheet Details

Part number	MRF6P27160HR6
Manufacturer	Freescale Semiconductor
File Size	446.20 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF6P27160HR6_FreescaleSemiconductor.pdf

MRF6P27160HR6 Product details

Description

Beads, Surface Mount 5.6 pF Chip Capacitors 3.3 pF Chip Capacitors 0.01 µF Chip Capacitors (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Chip Capacitors 47 µF, 16 V Tantalum Chip Capacitors 4.3 pF Chip Capacitors 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitors 330 µF, 63 V Electrolytic Capacitors 3.3 W, 1/4 W Chip Resistors (1210) Part Number 2743019447 100B5R6CP500X 100B3R3CP500X C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AS 100B4R3CP500X G

Features

16 15 Gps, POWER GAIN (dB) 14 13 12 20 V 11 VDD = 16 V 0 400 10 0 60 120 180 240 300 Pout, OUTPUT POWER (WATTS) CW 28 V 24 V IDQ = 1800 mA f = 2645 MHz 10 30 32 V 5 VDD = 28 Vdc IDQ = 1800 mA f = 2645 MHz 1 10 100 20 0 ηD.
5 0.1 10 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6P27160HR6 6 Figure 11. Power Gain versus Output Power.

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Published: Sep 12, 2005 |