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MRF9002NR2 - RF Power FET

MRF9002NR2 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev.8, 5/2006 RF Power Field Effect Transistor Array N - Ch.
33 pF Chip Capacitors (0805) 1.

MRF9002NR2 Features

* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* RoHS Compliant
* In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MRF9002NR2

MRF9002NR2 Applications

* with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a so

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Power FET Freescale Semiconductor
Freescale Semiconductor MRF9002NR2-like datasheet