Part number:
2SK2891-01
Manufacturer:
Fuji Electric
File Size:
455.37 KB
Description:
Power mosfet.
.
2SK2891-01 Datasheet (455.37 KB)
2SK2891-01 Datasheet (455.37 KB)
2SK2891-01
Fuji Electric
455.37 KB
Power mosfet.
.
📁 Related Datasheet
2SK2890-01 - N-channel MOS-FET
(Fuji Electric)
2SK2890-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
.
2SK2892-01R - N-channel MOS-FET
(Fuji Electric)
2SK2892-01R
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
.
2SK2893-01 - N-channel MOS-FET
(Fuji Electric)
2SK2893-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
.
2SK2894-01R - N-channel MOS-FET
(Fuji Electric)
2SK2894-01R
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
.
2SK2895-01 - N-channel MOS-FET
(Fuji Electric)
2SK2895-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V
.
2SK2896-01L - N-channel MOS-FET
(Fuji Electric)
2SK2896-01L,S
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
60V
N-channel MOS-FE.
2SK2896-01S - N-channel MOS-FET
(Fuji Electric)
2SK2896-01L,S
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
60V
N-channel MOS-FE.
2SK2897-01 - N-channel MOS-FET
(Fuji Electric)
2SK2897-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V
.
