Part number:
2SK2906-01
Manufacturer:
Fuji Electric
File Size:
249.76 KB
Description:
N-channel mos-fet.
* High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 7,8mΩ ±100A 150W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (
2SK2906-01 Datasheet (249.76 KB)
2SK2906-01
Fuji Electric
249.76 KB
N-channel mos-fet.
📁 Related Datasheet
2SK2900-01 - N-channel MOS-FET
(Fuji Electric)
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MO.
2SK2901-01L - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2901-01L,S
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
2SK2901-01S - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2901-01L,S
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
2SK2902-01MR - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
2SK2903-01MR - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2903-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
2SK2904-01 - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2904-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FU.
2SK2905-01R - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2905-01R
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
F.
2SK2907-01 - N-channel MOS-FET
(Fuji Electric)
2SK2907-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V
.