FMH30N60S1 - N-Channel enhancement mode power MOSFET

Fuji Electric

FMH30N60S1 Product details

Description

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Note. 1 : Limited by maximum channel temperature.. 2 : Tch≤150°C, See Fig.1 and.

Features

Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg).

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Datasheet Details

Part number: FMH30N60S1
Manufacturer: Fuji Electric
File Size: 509.97 KB
Datasheet: FMH30N60S1-FujiElectric.pdf
Description: N-Channel enhancement mode power MOSFET

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N-Channel enhancement mode power MOSFET Fuji Electric

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