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FMH13N60ES - N-CHANNEL SILICON POWER MOSFET

FMH13N60ES Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 600 600 ±13 ±52 ±30 13 471.5 19.5 4.7 100 2.50 195 150 -55 to + 150 Unit V V A.

Features

  • FMH13N60ES Outline Drawings [mm] TO-3P(Q) FUJI.

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Datasheet Details

Part number
FMH13N60ES
Manufacturer
Fuji Electric
File Size
648.33 KB
Datasheet
FMH13N60ES_FujiElectric.pdf
Description
N-CHANNEL SILICON POWER MOSFET

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