FMH23N60E - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

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Datasheet Details

Part number: FMH23N60E
Manufacturer: Fuji Electric
File Size: 635.69 KB
Datasheet: FMH23N60E_FujiElectric.pdf
Description: N-CHANNEL SILICON POWER MOSFET

FMH23N60E Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 600 600 ±23 ±92 ±30 23 1033.1 40 7.5 100 2.50 400 150 -55 to + 150 Unit V V A.

Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI.

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N-CHANNEL SILICON POWER MOSFET Fuji Electric

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