IRFF430 Datasheet - GE

IRFF430 FIELD EFFECT POWER TRANSISTOR

~D~[F~ IRFF430,431 FIELD EFFECT POVVER TRANSISTOR 2.75 AMPERES 500, 450 VOLTS ROS(ON) =1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating.

IRFF430 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF430 Datasheet (186.22 KB)

IRFF430 Datasheet Preview — Preview of IRFF430 PDF

Datasheet Details

Part number:

IRFF430

Manufacturer:

File Size:

186.22 KB

Description:

Field effect power transistor.

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IRFF430 FIELD EFFECT POWER TRANSISTOR GE

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