Datasheet4U Logo Datasheet4U.com

IRFF430 FIELD EFFECT POWER TRANSISTOR

IRFF430 Description

~D~[F~ IRFF430,431 FIELD EFFECT POVVER TRANSISTOR 2.75 AMPERES 500, 450 VOLTS ROS(ON) =1.5 n Preliminary This series of N-Channel Enhancement-mode.

IRFF430 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

📥 Download Datasheet

Preview of IRFF430 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRFF430
Manufacturer
GE
File Size
186.22 KB
Datasheet
IRFF430-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

📁 Related Datasheet

  • IRFF420 - N-Channel Power MOSFET (Seme LAB)
  • IRFF024 - N-CHANNEL (International Rectifier)
  • IRFF034 - Bipolar NPN Device (Seme LAB)
  • IRFF110 - N-Channel Power MOSFET (Intersil Corporation)
  • IRFF111 - (IRFF110 - IRFF113) Power MOS Field-Effect Transistors (GE Solid State)
  • IRFF112 - (IRFF110 - IRFF113) Power MOS Field-Effect Transistors (GE Solid State)
  • IRFF113 - (IRFF110 - IRFF113) Power MOS Field-Effect Transistors (GE Solid State)
  • IRFF120 - N-CHANNEL POWER MOSFET (Seme LAB)

📌 All Tags

FIELD EFFECT POWER TRANSISTOR GE
GE IRFF430-like datasheet