* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF430
GE
186.22 KB
Field effect power transistor.
~D~[F~ IRFF430,431
FIELD EFFECT POVVER TRANSISTOR
2.75 AMPERES 500, 450 VOLTS
ROS(ON) =1.5 n
Preliminary
This series of N-Channel Enhancement-mode.
📁 Related Datasheet
IRFF430 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Seme LAB)
IRFF430 N-Channel Power MOSFET (Intersil Corporation)
IRFF430 HEXFET TRANSISTORS (International Rectifier)
IRFF431 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF432 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF433 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF420 N-Channel Power MOSFET (Seme LAB)
IRFF420 N-Channel Power MOSFET (Intersil Corporation)
IRFF420 HEXFET TRANSISTORS (International Rectifier)
IRFF420 FIELD EFFECT POWER TRANSISTOR (GE)
