BL2N60D Features
* RDS(on)=3.8Ω@VGS=10V. Pb
* Ultra Low gate charge (typical 9.0nC) Lead-free
* Low reverse transfer capacitance (Crss = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness Production specification BL2N6
Datasheet Details
BL2N60D, BL2N60I
GME
383.57 KB
N-channel power mosfet.
This datasheet PDF includes multiple part numbers: BL2N60D, BL2N60I.
Please refer to the document for exact specifications by model.
BL2N60D Distributor
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