BL2N65I N-Channel Power Mosfet

GME

BL2N65I Description

2 Amps, 600 Volts N-CHANNEL MOSFET .

BL2N65I Features

* RDS(on)=3.8Ω@VGS=10V. Pb
* Ultra Low gate charge (typical 9.0nC) Lead-free
* Low reverse transfer capacitance (Crss = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness Production specification BL2N6

📥 Download Datasheet

BL2N65I Datasheet Preview — Preview of BL2N65I PDF

Datasheet Details

Part number: BL2N65I
Manufacturer: GME
File Size: 309.94 KB
Datasheet: BL2N65I-GME.pdf
Description: N-Channel Power Mosfet

📁 Related Datasheet

BL2000 - UIT BL2000 Hardware installation and maintenance guide (UIT)
BL2002A - Display (Bolymin)
BL2002A1 - DISPLAY (Bolymin)
BL2002AW - DISPLAY (Bolymin)
BL2002B - Display (Bolymin)
BL2004A - PLED (Bolymin)
BL2004A1 - DISPLAY (Bolymin)
BL2004AW - DISPLAY (Bolymin)

📌 All Tags

N-Channel Power Mosfet GME

GME BL2N65I-like datasheet

BL2N65D - N-Channel Power Mosfet
BL2N60D - N-Channel Power Mosfet
BL2N60F - N-Channel Power MOSFET
BL2N60I - N-Channel Power Mosfet
BL2300 - N-Channel Power Mosfet
BL2301 - P-Channel Enhancement Mode Field Effect Transistor