Datasheet4U.com

BL2N60F - N-Channel Power MOSFET

GME

📥 Download Datasheet

BL2N60F Datasheet Preview — Preview of BL2N60F PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	BL2N60F
Manufacturer	GME
File Size	493.25 KB
Description	N-Channel Power MOSFET
Datasheet	BL2N60F-GME.pdf

BL2N60F Product details

Features

RDS(on)=3.8Ω@VGS=10V. Pb.
Ultra Low gate charge (typical 9.0nC) Lead-free.
Low reverse transfer capacitance (Crss = typical 5.0 pF).
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness Production specification BL2N60F ITO-220AB.

📁 BL2N60F Similar Datasheet

BL2000 - UIT BL2000 Hardware installation and maintenance guide (UIT)
BL2002A - Display (Bolymin)
BL2002A1 - DISPLAY (Bolymin)
BL2002AW - DISPLAY (Bolymin)
BL2002B - Display (Bolymin)
BL2004A - PLED (Bolymin)
BL2004A1 - DISPLAY (Bolymin)
BL2004AW - DISPLAY (Bolymin)

Other Datasheets by GME

BL2N60D - N-Channel Power Mosfet
BL2N60I - N-Channel Power Mosfet
BL2N65D - N-Channel Power Mosfet
BL2N65I - N-Channel Power Mosfet
BL2300 - N-Channel Power Mosfet
BL2301 - P-Channel Enhancement Mode Field Effect Transistor

Published: May 18, 2018 |