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18N10 N-Channel Enhancement Mode Power MOSFET

18N10 Description

GOFORD 18N10 N-Channel Enhancement Mode Power MOSFET .
The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

18N10 Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

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Datasheet Details

Part number
18N10
Manufacturer
GOFORD
File Size
612.98 KB
Datasheet
18N10-GOFORD.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET GOFORD
GOFORD 18N10-like datasheet