18N10 N-Channel Enhancement Mode Power MOSFET

Description

GOFORD 18N10 N-Channel Enhancement Mode Power MOSFET .
The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

Datasheet Specifications

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

18N10 Distributors

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