G110N06 Datasheet, Mosfet, GOFORD

G110N06 Features

• Mosfet
• VDSS RDS(ON) ID @ 10V(Typ) 55V 5.2 mΩ 110A
• Ultra Low On-Resistance
• High UIS and UIS 100% Test Application
• Hard Switched and High Frequency Cir

PDF File Details

Part number:

G110N06

Manufacturer:

GOFORD

File Size:

1.54MB

Download:

📄 Datasheet

Description:

Mosfet. The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultr

G110N06 Application

• Applications Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features
• VDSS RDS(ON) ID @ 10

TAGS

G110N06

GOFORD

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