Datasheet4U Logo Datasheet4U.com

G111K

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

G111K Features

* Simple Drive Requirement

* Small Package Outline

* RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maxim

G111K Datasheet (392.16 KB)

Preview of G111K PDF

Datasheet Details

Part number:

G111K

Manufacturer:

GTM

File Size:

392.16 KB

Description:

N-channel enhancement mode power mosfet.
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B G 111 K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.

📁 Related Datasheet

G1115 - GaAsP photodiode (Hamamatsu Corporation)
.

G1116 - GaAsP photodiode (Hamamatsu Corporation)
.

G1116 - 0.6A Low Dropout Positive Adjustable or Fixed-Mode Regulator (GTM)
.. ISSUED DATE :2006/06/06 REVISED DATE : The G1116 is a low dropout at positive adjustable or fixed-mode regulator with minimum of .

G1117 - 1A Low-Dropout Linear Regulator (Global Mixed-mode Technology)
Global Mixed-mode Technology G1117-XX 1A Low-Dropout Linear Regulator Features „ Available in 1.5V, 1.8V, 2.5V, 3.3V,3.5V Version „ Space Saving SO.

G1117 - GaAsP photodiode (Hamamatsu Corporation)
.

G1117A - 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator (GTM)
.. ISSUED DATE :2006/06/06 REVISED DATE : G 111 7 A 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator The G1117A is a low d.

G1118 - GaAsP photodiode (Hamamatsu Corporation)
.

G110N06 - MOSFET (GOFORD)
GOFORD General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capabili.

TAGS

G111K N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

Image Gallery

G111K Datasheet Preview Page 2 G111K Datasheet Preview Page 3

G111K Distributor