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GSMP0336, GSMP0336-GOOD 30V 4 IN 1 N-Channel MOSFETs

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Description

GSMP0336 30V 4 IN 1 N-Channel MOSFETs Main Product Characteristics BVDSS 30V RDS(ON) ID 10.2mΩ 35A G3 G4 Phase2 VDD GND Phase2 Phase1 GND .
The GSMP0336 utilizes the latest techniques to achieve high cell density and low on-resistance.

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This datasheet PDF includes multiple part numbers: GSMP0336, GSMP0336-GOOD. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
GSMP0336, GSMP0336-GOOD
Manufacturer
GOOD-ARK
File Size
826.84 KB
Datasheet
GSMP0336-GOOD-ARK.pdf
Description
30V 4 IN 1 N-Channel MOSFETs
Note
This datasheet PDF includes multiple part numbers: GSMP0336, GSMP0336-GOOD.
Please refer to the document for exact specifications by model.

Features

* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge

Applications

* Absolute Maximum Ratings (TC=25°C unless otherwise specified) Parameter Symbol Max. Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) 35 ID 22 Drain Current-Pulsed1 Single Pulse Avalanche Energy2 IDM 140 EAS

GSMP0336 Distributors

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