Description
GSMP0336 30V 4 IN 1 N-Channel MOSFETs Main Product Characteristics BVDSS 30V RDS(ON) ID 10.2mΩ 35A G3 G4 Phase2 VDD GND Phase2 Phase1 GND .
The GSMP0336 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage Gate-Source Voltage
VDS
30
VGS
±20
Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C)
35 ID
22
Drain Current-Pulsed1 Single Pulse Avalanche Energy2
IDM
140
EAS