G3S06505R Datasheet - GPT

650V/5A Silicon Carbide Power Schottky Barrier Diode

* Zero reverse recovery current

* Zero forward recovery voltage

* Temperature independent switching behavior

* High temperature operation

* High frequency operation Key Characteristics VRRM 650 V IF, Tc≤160℃ 5A QC 23 nC Benefits

* Unipolar rect

G3S06505R

GPT

612.64 KB

650v/5a silicon carbide power schottky barrier diode.

📁 Related Datasheet

G3S06520B 650V/20A Silicon Carbide Power Schottky Barrier Diode (GPT)

G3S Ultra-small Relay (OMRON)

G3S17050PM 1700V 50A Silicon Carbide Power Schottky Barrier Diode (GPT)

G3SBA80 Glass Passivated Single-Phase Bridge Rectifier (General Semiconductor)

G3SD Ultra-small Relay (OMRON)

G30 Voltage-Controlled Attenuator Module (MACOM)

G3000TF250 Anode Shorted Gate Turn-Off Thyristor (IXYS)

G3000TF450 Anode Shorted Gate Turn-Off Thyristor (IXYS)

G300N04 N-Channel Enhancement Mode Power MOSFET (GOFORD)

G300N04D3 N-Channel Enhancement Mode Power MOSFET (GOFORD)

TAGS

Image Gallery