G3S06505R - 650V/5A Silicon Carbide Power Schottky Barrier Diode

Datasheet Details

Zero reverse recovery current.
Zero forward recovery voltage.
Temperature independent switching behavior.
High temperature operation.
High frequency operation Key Characteristics VRRM 650 V IF, Tc≤160℃ 5A QC 23 nC Benefits.
Unipolar rectifier.
Substantially reduced switching losses.
No thermal run-away with parallel devices.
Reduced heat sink requirements.

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