Part number: G3S06520B Manufacturer: GPT File Size: 634.36kb Download: 📄 Datasheet Description: 650v/20a silicon carbide power schottky barrier diode.
G3S06505R - 650V/5A Silicon Carbide Power Schottky Barrier Diode (GPT) Datasheet V2020.A.1 G3S06505R 650V/5A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recovery v.
G3S - Ultra-small Relay (OMRON) Solid State Relay G3S/G3SD Ultra-small Relay Breaks up to 1 A • Ultra-small, dual in-line package (DIP) SSR. • Terminals patible with G6B Electrom.
G3S17050PM - 1700V 50A Silicon Carbide Power Schottky Barrier Diode (GPT) Datasheet V2021.A.0 G3S17050PM 1700V/ 50A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recove.
G3SBA80 - Glass Passivated Single-Phase Bridge Rectifier (General Semiconductor) G3SBA20 and G3SBA80 Case Type GBU Glass Passivated Single-Phase New Product Bridge Rectifier Reverse Voltage 200 and 800 V Forward Current 4.0 A Fea.
G3SD - Ultra-small Relay (OMRON) Solid State Relay G3S/G3SD Ultra-small Relay Breaks up to 1 A • Ultra-small, dual in-line package (DIP) SSR. • Terminals patible with G6B Electrom.
G30 - Voltage-Controlled Attenuator Module (MACOM) G30/SMG30 Voltage-Controlled Attenuator Module 100 to 2000 MHz Rev. V3 Features FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% .
G3000TF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS) Date:- 5th March 2013 Data Sheet Issue:- A1 Anode Shorted Gate Turn-Off Thyristor Types G3000TF250 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.
G3000TF450 - Anode Shorted Gate Turn-Off Thyristor (IXYS) Date:- 28th April 2013 Data Sheet Issue:- 2 Anode Shorted Gate Turn-Off Thyristor Types G3000TF450 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.
G300N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD) G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate ch.
G300N04D3 - N-Channel Enhancement Mode Power MOSFET (GOFORD) G300N04D3 N-Channel Enhancement Mode Power MOSFET Description The G300N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate .
