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GS8160V18AT 1M x 18 512K x 32 512K x 36 18Mb Sync Burst SRAMs

GS8160V18AT Description

Preliminary www.DataSheet4U.com GS8160V18/32/36AT-350/333/300/250/200/150 100-Pin TQFP Commercial Temp Industrial Temp .
Applications The GS8160V18/32/36AT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address.

GS8160V18AT Features

* 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 350 MHz
* 150 MHz 1.8 V VDD 1.8 V I/O
* FT pin for user-configurable flow through or pipeline operation
* Single Cycle Deselect (SCD) operation
* 1.8 V +10%/
* 10% core power supply
* 1.8 V I/O supply

GS8160V18AT Applications

* JEDEC-standard 100-lead TQFP package cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Li

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Datasheet Details

Part number
GS8160V18AT
Manufacturer
GSI Technology
File Size
528.89 KB
Datasheet
GS8160V18AT_GSITechnology.pdf
Description
1M x 18 512K x 32 512K x 36 18Mb Sync Burst SRAMs

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512K 512K 18Mb Sync Burst SRAMs GSI Technology
GSI Technology GS8160V18AT-like datasheet