GSC6680 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE :2006/10/02C GSC6680 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.
The GSC6680 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: GSC6680
Manufacturer: GTM
File Size: 306.87 KB
Datasheet: GSC6680_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Low On-Resistance
* High Vgs Max Rating Voltage
* Surface Mount Package Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0̓ 8̓ 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 RE

GSC6680 Distributors

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GSC6680 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM GSC6680-like datasheet