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GC10MPS12-252 - Silicon Carbide Schottky Diode

GC10MPS12-252 Description

GC10MPS12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode .

GC10MPS12-252 Features

* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive Temperature Coefficie

GC10MPS12-252 Applications

* Boost Diode in Power Factor Correction (PFC)
* Switched Mode Power Supply (SMPS)
* Uninterruptible Power Supply (UPS)
* Motor Drives
* Freewheeling / Anti-parallel Diode in Inverters
* Solar Inverters
* LED and HID Lighting
* AC-DC Co

📥 Download Datasheet

Preview of GC10MPS12-252 PDF
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Datasheet Details

Part number
GC10MPS12-252
Manufacturer
GeneSiC
File Size
462.22 KB
Datasheet
GC10MPS12-252-GeneSiC.pdf
Description
Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode GeneSiC
GeneSiC GC10MPS12-252-like datasheet