MBR600100CTR Features
* High Surge Capability
* Types from 45 V to 100 V VRRM
* Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Co
Datasheet Details
MBR600100CTR, MBR60045CT
GeneSiC
461.66 KB
Silicon power schottky diode.
This datasheet PDF includes multiple part numbers: MBR600100CTR, MBR60045CT.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
MBR600100CT Schottky Power Diode (Naina Semiconductor)
MBR600100CT Silicon Power Schottky Diode (America Semiconductor)
MBR600100CT Silicon Power Schottky Diode (GeneSiC)
MBR600100CTR Schottky Power Diode (Naina Semiconductor)
MBR600100CTR Silicon Power Schottky Diode (America Semiconductor)
MBR60020CT SCHOTTKY DIODES (TRANSYS)
MBR60020CT Schottky Power Diode (Naina Semiconductor)
MBR60020CT Silicon Power Schottky Diode (America Semiconductor)
MBR600100CTR Distributor
