2SB1025 - Silicon PNP Transistor

Features

Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature.
1. PW 10 ms; d 0.02. Symbol VCBO VCEO VEBO IC ICP.
1 PC.
2 Tj Tstg Rating -120 -80 -5 -1 -2 1 150 -55 to +150 Unit V V V A A W.
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics Ta =.

Guangdong Kexin Industrial

Datasheet Details

Part number	2SB1025
Manufacturer	Guangdong Kexin Industrial
File Size	104.49 KB
Description	Silicon PNP Transistor
Datasheet	2SB1025 Datasheet
Additional preview pages of the 2SB1025 datasheet.

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www.DataSheet.co.kr SMD Type Silicon PNP Epitaxial 2SB1025 Transistors Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature *1. PW 10 ms; d 0.02. Symbol VCBO VCEO VEBO IC ICP *1 PC *2 Tj Tstg Rating -120 -80 -5 -1 -2 1 150 -55 to +150 Unit V V V A A W *2. Value on the alumina ceramic board (12.5 × 20 × 0.

Published: Oct 28, 2011 |