Datasheet Details
- Part number
- GC3M0160120D
- Manufacturer
- Gwok
- File Size
- 3.67 MB
- Datasheet
- GC3M0160120D-Gwok.pdf
- Description
- Silicon Carbide Power MOSFET
GC3M0160120D Description
Wuxi Gwok Semiconductor Co.,Ltd GC3M0160120D Silicon Carbide Power MOSFET N-Channel Enhancement Mode .
GC3M0160120D Features
* High blocking voltage with low On- resistan ce VD S 1200 V
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
ID @ 25˚C
17 A
* Halogen free, RoHS compliant
RDS(on)
160 mΩ
Benefits
* Higher s
GC3M0160120D Applications
* Renewable energy
* High voltage DC/DC converters
* Switch Mode Power Supplies
* UPS
TO-247-3
Package
Part Number GC3M0160120D
Package TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VDSmax VGSma
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