GC3M0160120D Silicon Carbide Power MOSFET

Description

Wuxi Gwok Semiconductor Co.,Ltd GC3M0160120D Silicon Carbide Power MOSFET N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: GC3M0160120D
Manufacturer: Gwok
File Size: 3.67 MB
Datasheet: GC3M0160120D-Gwok.pdf
Description: Silicon Carbide Power MOSFET

Features

* High blocking voltage with low On- resistan ce VD S 1200 V
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr) ID @ 25˚C 17 A
* Halogen free, RoHS compliant RDS(on) 160 mΩ Benefits
* Higher s

Applications

* Renewable energy
* High voltage DC/DC converters
* Switch Mode Power Supplies
* UPS TO-247-3 Package Part Number GC3M0160120D Package TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax VGSma

GC3M0160120D Distributors

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GC3M0160120D Silicon Carbide Power MOSFET Gwok

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