Gwok Datasheet | Specifications & PDF Download

GC3D20065A Silicon Carbide Schottky Diode Features VRRM = 650 V • 650-Volt Schottky Rectifier IF (TC=135˚C) = 26 A** • Zero Reverse Recovery C

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Wuxi Gwok Semiconductor Co.,Ltd GC3M0160120D Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low On-

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GC4D40120D Silicon Carbide Schottky Diode Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperatu

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Wuxi Gwok Semiconductor Co.,Ltd GC3D02060A Silicon Carbide Schottky Diode Features • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode A

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Wuxi Gwok Semiconductor Co.,Ltd GC3D16065A Silicon Carbide Schottky Diode Features • 650 Volt Schottky Rectifier • Zero Reverse Recovery Current • Z

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GC3D10065A Silicon Carbide Schottky Diode Features • 650-Volt Schottky Rectifier VRRM = 650 V • Zero Reverse Recovery Current • Zero Forward Reco

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Wuxi Gwok Semiconductor Co.,Ltd GC4D20120H Silicon Carbide Schottky Diode Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High

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Wuxi Gwok Semiconductor Co.,Ltd GC3M0032120D Silicon Carbide Power MOSFET NN-CChhannel El Enhhaanncceemmeennt tMMooddee Features • VDS 12

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Wuxi Gwok Semiconductor Co.,Ltd GC4D30120D Silicon Carbide Schottky Diode Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High

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