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GC4D20120H - Silicon Carbide Schottky Diode
Wuxi Gwok Semiconductor Co.,Ltd GC4D20120H Silicon Carbide Schottky Diode Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High.GC3D20065A - Silicon Carbide Schottky Diode
GC3D20065A Silicon Carbide Schottky Diode Features VRRM = 650 V • 650-Volt Schottky Rectifier IF (TC=135˚C) = 26 A** • Zero Reverse Recovery C.GC4D40120D - Silicon Carbide Schottky Diode
GC4D40120D Silicon Carbide Schottky Diode Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperatu.GC3M0032120D - Silicon Carbide Power MOSFET
Wuxi Gwok Semiconductor Co.,Ltd GC3M0032120D Silicon Carbide Power MOSFET NN-CChhannel El Enhhaanncceemmeennt tMMooddee Features • VDS 12.GC3M0160120D - Silicon Carbide Power MOSFET
Wuxi Gwok Semiconductor Co.,Ltd GC3M0160120D Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low On- .GC3D16065A - Silicon Carbide Schottky Diode
Wuxi Gwok Semiconductor Co.,Ltd GC3D16065A Silicon Carbide Schottky Diode Features • 650 Volt Schottky Rectifier • Zero Reverse Recovery Current • Z.GC4D30120D - Silicon Carbide Schottky Diode
Wuxi Gwok Semiconductor Co.,Ltd GC4D30120D Silicon Carbide Schottky Diode Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High.GC3D02060A - Silicon Carbide Schottky Diode
Wuxi Gwok Semiconductor Co.,Ltd GC3D02060A Silicon Carbide Schottky Diode Features • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode A.GC3D10065A - Silicon Carbide Schottky Diode
GC3D10065A Silicon Carbide Schottky Diode Features • 650-Volt Schottky Rectifier VRRM = 650 V • Zero Reverse Recovery Current • Zero Forward Reco.