Datasheet Details
Part number:
HM09P12D
Manufacturer:
H&M Semiconductor
File Size:
429.08 KB
Description:
P-Channel Enhancement Mode Power MOSFET
Features
* VDS = -12V,ID = -9A RDS(ON) < 35mΩ @ VGS=-2.5V RDS(ON) < 25mΩ @ VGS=-4.5V
* Advanced trench MOSFET process technology
* Ultra low on-resistance with low gate charge Application
* PWM applications
* Load switch
* Battery charge in cellular handset +0 3' D G S Schematic d
