HM09P12D P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

P-Channel Enhancement Mode Power MOSFET .
The HM09P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .

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Datasheet Specifications

Part number: HM09P12D
Manufacturer: H&M Semiconductor
File Size: 429.08 KB
Datasheet: HM09P12D-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -12V,ID = -9A RDS(ON) < 35mΩ @ VGS=-2.5V RDS(ON) < 25mΩ @ VGS=-4.5V
* Advanced trench MOSFET process technology

HM09P12D Distributors

📁 Related Datasheet

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HM09P12D P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM09P12D-like datasheet