Datasheet4U Logo Datasheet4U.com

HM02P30PR - -300V P-Channel Enhancement Mode MOSFET

HM02P30PR Description

HM02P30PR -300V P-Channel Enhancement Mode MOSFET .
The HM02P30PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

HM02P30PR Applications

* , should be limited by total power dissipation. -ID Drain Current (A) Typical Characteristics 1.2 0.9 0.6 0.3 HM02P30PR -300V P-Channel Enhancement Mode MOSFET VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V RD S O (N m Ω ) 550 ID= 0 . 5 A 540 530 520 510 0.0 0 0.25 0.5 0.75 1 -VDS ,Drain-to-

📥 Download Datasheet

Preview of HM02P30PR PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HM02P30PR
Manufacturer
H&M Semiconductor
File Size
1.32 MB
Datasheet
HM02P30PR-HMSemiconductor.pdf
Description
-300V P-Channel Enhancement Mode MOSFET

📁 Related Datasheet

  • HM00-93839 - Low Profile Dual-Output Surface Mount Inductors (Bi technologies)
  • HM00-96553 - Flyback Transformers (BI Technologies)
  • HM01B0 - QVGA 60FPS CMOS Image Sensor (Himax)
  • HM01B0-MNA-01FT870 - Compact Camera Module (Himax)

📌 All Tags

-300V P-Channel Enhancement Mode MOSFET H&M Semiconductor
H&M Semiconductor HM02P30PR-like datasheet