Datasheet Details
- Part number
- HM02P30R
- Manufacturer
- H&M Semiconductor
- File Size
- 1.25 MB
- Datasheet
- HM02P30R-HMSemiconductor.pdf
- Description
- -300V P-Channel Enhancement Mode MOSFET
HM02P30R Description
HM02P30R -ϯ00V P-Channel Enhancement Mode MOSFET .
The HM02P30R uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
HM02P30R Applications
* , should be limited by total power dissipation. -ID Drain Current (A)
Typical Characteristics
1.2 0.9 0.6 0.3
HM02P30R
-300V P-Channel Enhancement Mode MOSFET
VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V
VGS=-3V
RD S O (N m Ω )
550
ID= 0 . 5 A
540
530
520
510
0.0 0
0.25
0.5
0.75
1
-VDS ,Drain-to-S
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