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HM02P30R - -300V P-Channel Enhancement Mode MOSFET

HM02P30R Description

HM02P30R -ϯ00V P-Channel Enhancement Mode MOSFET .
The HM02P30R uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

HM02P30R Applications

* , should be limited by total power dissipation. -ID Drain Current (A) Typical Characteristics 1.2 0.9 0.6 0.3 HM02P30R -300V P-Channel Enhancement Mode MOSFET VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V RD S O (N m Ω ) 550 ID= 0 . 5 A 540 530 520 510 0.0 0 0.25 0.5 0.75 1 -VDS ,Drain-to-S

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Datasheet Details

Part number
HM02P30R
Manufacturer
H&M Semiconductor
File Size
1.25 MB
Datasheet
HM02P30R-HMSemiconductor.pdf
Description
-300V P-Channel Enhancement Mode MOSFET

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-300V P-Channel Enhancement Mode MOSFET H&M Semiconductor
H&M Semiconductor HM02P30R-like datasheet

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